ВУЗ: Не указан
Категория: Не указан
Дисциплина: Не указана
Добавлен: 11.03.2025
Просмотров: 19
Скачиваний: 0
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at www.onsemi.com
onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Linear Regulator - Low VIN, Low Noise, High PSRR
200 mA
NCP110
The NCP110 is a linear regulator capable of supplying 200 mA output current from 1.1 V input voltage. The device provides wide output range from 0.6 V up to 4.0 V, very low noise and high PSRR. Due to low quiescent current the NCP110 is suitable for battery powered devices such as smartphones and tablets. The device is designed to work with a 1 mF input and a 1 mF output ceramic capacitor. It is available in ultra−small 0.35P, 0.64 mm x 0.64 mm Chip Scale Package (CSP) and XDFN4 0.65P, 1 mm x 1 mm.
Features
•Operating Input Voltage Range: 1.1 V to 5.5 V
•Available in Fixed Voltage Option: 0.6 V to 4.0 V
•±2% Accuracy Over Load/Temperature
•Ultra Low Quiescent Current Typ. 20 mA
•Standby Current: Typ. 0.1 mA
•Very Low Dropout: 70 mV for 1.05 V @ 100 mA
•High PSRR: Typ. 95 dB at 20 mA, f = 1 kHz
•Ultra Low Noise: 8.8 mVRMS
•Stable with a 1 mF Small Case Size Ceramic Capacitors
•Available in −WLCSP4 0.64mm x 0.64mm x 0.33mm − Case 567VS −XDFN4 1mm x 1mm x 0.4mm − Case 711AJ
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Typical Applications
•Battery−powered Equipment
•Smartphone, Tablets
•Digital Cameras
•Smoke Detectors
•Portable Medical Equipment
•RF, PLL, VCO and Clock Power Supplies
•Battery Powered Wireless IoT Modules
www.onsemi.com
|
MARKING |
|
|
DIAGRAMS |
|
WLCSP4 |
XM |
|
CASE 567VS |
|
|
1 |
XX M |
|
XDFN4 |
||
1 |
||
CASE 711AJ |
||
|
X or XX = Specific Device Code M = Date Code
PIN CONNECTIONS
IN OUT
A1 A2
B1 B2
EN GND
(Top View)
VIN
|
IN |
OUT |
|
|
NCP110 |
CIN |
EN |
|
1 mF |
ON |
|
Ceramic |
OFF |
GND |
|
||
|
|
|
|
|
|
|
|
|
|
|
VOUT |
(Top View) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
COUT |
ORDERING INFORMATION |
||
|
|
|
|
|
|
|
|
See detailed ordering, marking and shipping information on |
|||
|
|
|
|
|
|
|
|
1 mF |
|||
|
|
|
|
|
|
|
|
Ceramic |
page 14 of this data sheet. |
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Figure 1. Typical Application Schematics
♥ Semiconductor Components Industries, LLC, 2017 |
1 |
Publication Order Number: |
July, 2020 − Rev. 6 |
|
NCP110/D |
NCP110
IN
EN |
ENABLE |
THERMAL |
LOGIC |
SHUTDOWN |
BANDGAP |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MOSFET |
|
||
REFERENCE |
|
|
|
|
|
|
|
INTEGRATED |
|
|
||
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
DRIVER WITH |
|
|
|
|
|
|
|
|
|
|
|
SOFT−START |
|
|
|
|
|
|
|
|
|
|
|
|
|
CURRENT LIMIT |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OUT
|
|
|
|
|
|
* Active Discharge Only |
|
|
|
|
|
|
|
|
|||
|
GND |
|
|
|
|
EN |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Figure 2. Simplified Schematic Block Diagram |
|
|
|
|
|
|
|
|
||||
PIN FUNCTION DESCRIPTION |
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Pin No. |
Pin No. |
|
Pin |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CSP4 |
XDFN4 |
|
Name |
|
|
Description |
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
A1 |
4 |
|
IN |
|
Input voltage supply pin |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||
A2 |
1 |
|
OUT |
|
Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor. |
|
|||||||||||
|
|
|
|
|
|
|
|
|
|||||||||
B1 |
3 |
|
EN |
|
Chip enable: Applying VEN < 0.2 V disables the regulator, Pulling VEN > 0.7 V enables the LDO. |
||||||||||||
B2 |
2 |
|
GND |
|
Common ground connection |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||
− |
EPAD |
|
EPAD |
|
Expose pad can be tied to ground plane for better power dissipation |
|
|||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
ABSOLUTE MAXIMUM RATINGS |
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
Rating |
|
|
Symbol |
|
|
|
Value |
|
Unit |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
Input Voltage (Note 1) |
|
|
|
|
|
|
VIN |
|
|
−0.3 V to 6 |
|
V |
|||||
Output Voltage |
|
|
|
|
|
|
VOUT |
−0.3 to VIN + 0.3, max. 6 V |
|
V |
|||||||
Chip Enable Input |
|
|
|
|
|
|
VCE |
|
|
−0.3 to 6 V |
|
V |
|||||
Output Short Circuit Duration |
|
|
|
tSC |
|
|
unlimited |
|
s |
||||||||
Maximum Junction Temperature |
|
|
|
TJ |
150 |
|
|
°C |
|||||||||
Storage Temperature |
|
|
|
|
|
|
TSTG |
|
|
−55 to 150 |
|
°C |
|||||
ESD Capability, Human Body Model (Note 2) |
|
|
ESDHBM |
2000 |
|
V |
|||||||||||
ESD Capability, Machine Model (Note 2) |
|
|
ESDMM |
200 |
|
|
V |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2.This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
Rating |
Symbol |
Value |
Unit |
|
|
|
|
|
|
Thermal Characteristics, CSP4 (Note 3) |
|
108 |
|
|
Thermal Resistance, Junction−to−Air |
|
|
||
|
|
°C/W |
||
|
RqJA |
|
||
Thermal Characteristics, XDFN4 (Note 3) |
208 |
|||
|
|
|||
Thermal Resistance, Junction−to−Air |
|
|
||
|
|
|
||
|
|
|
|
3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7
www.onsemi.com
2
NCP110
ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.3 V or 1.1 V, whichever is greater; IOUT = 1 mA, CIN =
COUT = 1 mF, unless otherwise noted. VEN = 1.0 V. Typical values are at TJ = +25°C (Note 4).
Parameter |
Test Conditions |
Symbol |
Min |
Typ |
Max |
Unit |
||
|
|
|
|
|
|
|
|
|
Operating Input Voltage |
|
|
|
VIN |
1.1 |
|
5.5 |
V |
Output Voltage Accuracy |
VIN = VOUT(NOM) + 0.3 V |
|
VOUT(NOM) ≤ 1.5 V |
VOUT |
−30 |
|
+30 |
mV |
|
(VIN ≥ 1.1 V) |
|
|
|
|
|
|
|
|
|
VOUT(NOM) > 1.5 V |
|
−2 |
|
+2 |
% |
|
|
|
|
|
|
||||
Line Regulation |
VOUT(NOM) + 0.5 V ≤ VIN ≤ 5.5 V, (VIN ≥ 1.1 V) |
LineReg |
|
0.02 |
|
%/V |
||
Load Regulation |
IOUT = 1 mA to 200 mA |
LoadReg |
|
0.001 |
|
%/mA |
||
Dropout Voltage (Note 5) |
VOUT(NOM) = 1.05 V |
|
IOUT = 50 mA |
VDO |
|
40 |
70 |
mV |
|
|
|
IOUT = 100 mA |
|
|
70 |
130 |
|
|
VOUT(NOM) = 1.20 V |
|
IOUT = 110 mA |
|
|
60 |
140 |
|
|
|
|
IOUT = 200 mA |
|
|
110 |
190 |
|
|
VOUT(NOM) = 1.80 V |
|
IOUT = 200 mA |
|
|
65 |
120 |
|
|
VOUT(NOM) = 2.80 V |
|
IOUT = 200 mA |
|
|
45 |
100 |
|
Output Current Limit |
VOUT = 90% VOUT(NOM) |
ICL |
225 |
300 |
|
mA |
||
Short Circuit Current |
VOUT = 0 V |
|
ISC |
|
300 |
|
||
|
|
|
|
|||||
Quiescent Current |
IOUT = 0 mA |
IQ |
|
20 |
25 |
mA |
||
Shutdown Current |
VEN ≤ 0.2 V, VIN = 1.1 V |
IDIS |
|
0.01 |
1.0 |
mA |
||
EN Pin Threshold Voltage |
EN Input Voltage “H” |
VENH |
0.7 |
|
|
V |
||
|
EN Input Voltage “L” |
VENL |
|
|
0.2 |
|||
|
|
|
|
|||||
EN Pull Down Current |
VEN = 1.1 V |
|
IEN |
|
0.2 |
0.5 |
mA |
|
Turn−On Time |
COUT = 1 mF, From assertion of VEN to |
tON |
|
120 |
|
ms |
||
|
VOUT = 95% VOUT(NOM) |
|
|
|
|
|
||
Power Supply Rejection Ratio |
IOUT = 20 mA, |
|
f = 100 Hz |
PSRR |
|
90 |
|
dB |
|
VIN = VOUT + 0.3 V |
|
f = 1 kHz |
|
|
95 |
|
|
|
|
|
f = 10 kHz |
|
|
85 |
|
|
|
|
|
f = 100 kHz |
|
|
55 |
|
|
|
|
|
|
|
|
|
|
|
Output Voltage Noise |
f = 10 Hz to 100 kHz |
VN |
|
8.8 |
|
mVRMS |
||
Thermal Shutdown Threshold |
Temperature rising |
TSDH |
|
160 |
|
°C |
||
|
Temperature falling |
TSDL |
|
140 |
|
°C |
||
Active Output Discharge Resis- |
VEN < 0.2 V, Version A only |
RDIS |
|
280 |
|
W |
||
tance |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4.Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5.Dropout voltage is characterized when VOUT falls 0.02 x VOUT(NOM) below VOUT(NOM).
6.Guaranteed by design.
www.onsemi.com
3
NCP110
TYPICAL CHARACTERISTICS
VOUT, OUTPUT VOLTAGE (V)
1.06
1.055
1.05
IOUT = 1 mA
1.045
IOUT = 200 mA
1.04
1.035
1.03−40 −20 0 20 40 60 80 100 120 TJ, TEMPERATURE (°C)
VOUT, OUTPUT VOLTAGE (V)
140
1.205
1.2
IOUT = 1 mA
1.195
1.19IOUT = 200 mA
1.185
1.8 −40 −20 0 20 40 60 80 100 120 140
TJ, TEMPERATURE (°C)
Figure 3. Output Voltage vs. Temperature − VOUT,nom = 1.05 V − CSP4
Figure 4. Output Voltage vs. Temperature − VOUT,nom = 1.2 V − CSP4
(V) |
1.81 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
1.805 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VOLTAGE |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1.8 |
|
|
|
|
|
|
|
|
I |
OUT = |
1 mA |
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OUTPUT, |
1.795 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
1.79 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IOUT = 200 mA |
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
OUT |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
V |
1.785 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1.78 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
−40 |
−20 |
0 |
20 |
|
40 |
60 |
80 100 120 |
TJ, TEMPERATURE (°C)
Figure 5. Output Voltage vs. Temperature − VOUT,nom = 1.8 V − CSP4
LOADREG, LOAD REGULATION (mV)
140
1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.9 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.8 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.7 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.6 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.5 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.4 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.3 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.1 |
|
|
|
|
|
|
|
|
VIN |
= V |
OUT,NOM + 0.3 V |
|
|
|||
|
|
|
|
|
|
|
|
IOUT |
= 1 mA to 200 mA |
|
|
|||||
0 |
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
−40 −20 |
0 |
20 |
40 |
60 |
80 100 120 140 |
TJ, TEMPERATURE (°C)
Figure 6. Load Regulation vs. Temperature
LINEREG, LINE REGULATION (mV/V)
0.3 |
1000 |
|
|
|
|
|
|
|
0.25 |
(mA) |
|
|
|
TJ = 125°C |
|
|
|
0.2 |
CURRENT |
|
|
|
|
TJ =−40°C |
|
|
|
|
|
|
|
|
|||
|
|
100 |
|
|
|
TJ = 25°C |
|
|
0.15 |
GROUND, |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
0.1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.05 |
GND |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
I |
|
|
|
|
|
|
|
0−40 −20 0 20 40 60 80 100 120 140 |
|
101u |
10u |
100u |
1m |
10m |
100m |
1 |
TJ, TEMPERATURE (°C) |
|
|
|
IOUT, OUTPUT CURRENT (A) |
|
|
||
Figure 7. Line Regulation vs. Temperature |
|
Figure 8. Ground Current vs. Output Current − |
|
|||||
|
|
|
|
VOUT,nom = 1.2 V |
|
|
www.onsemi.com
4
NCP110
TYPICAL CHARACTERISTICS
VDROP, DROPOUT VOLTAGE (mV)
160 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
140 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
120 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
100 |
|
|
|
|
|
|
|
|
|
|
TJ = |
125°C |
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
TJ = 25°C |
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||
80 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
60 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
40 |
|
|
|
|
|
|
|
|
|
|
|
|
|
TJ =−40°C |
|
|
|
|
|
|
|||||
20 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
180 |
200 |
|||||||||||||||
|
|
|
|
|
IOUT, OUTPUT CURRENT (mA) |
|
|
|
|
|
|
VDROP, DROPOUT VOLTAGE (mV)
200 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
180 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
160 |
|
|
|
|
IOUT = 200 mA |
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
140 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
120 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
100 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
80 |
|
|
|
|
IOUT = 100 mA |
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
60 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
40 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IOUT = 10 mA |
|
|
|
|
|
||||
20 |
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
−40 −20 0 20 40 60 80 100 120 140 TJ, TEMPERATURE (°C)
Figure 9. Dropout Voltage vs. Output Current − VOUT,nom = 1.2 V − CSP4 Package
Figure 10. Dropout Voltage vs. Temperature − VOUT,nom = 1.05 V − CSP4 Package
VDROP, DROPOUT VOLTAGE (mV)
160
140
120
100
80
60
40
20
0 −40 −20
IOUT = 200 mA
IOUT = 100 mA
IOUT = 10 mA
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
|
TJ, TEMPERATURE (°C) |
|
|
|
VDROP, DROPOUT VOLTAGE (mV)
100 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
80 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IOUT |
= 200 |
mA |
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
60 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
40 |
|
|
|
|
|
|
|
IOUT = 100 mA |
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
20 |
|
|
|
|
|
|
|
|
I |
OUT = |
10 mA |
|
||||||
0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
−40 −20 |
0 |
20 |
40 60 |
80 100 120 140 |
TJ, TEMPERATURE (°C)
Figure 11. Dropout Voltage vs. Temperature − VOUT,nom = 1.2 V − CSP4 Package
Figure 12. Dropout Voltage vs. Temperature − VOUT,nom = 1.8 V − CSP4 Package
, SHORT |
(mA) |
SC |
|
CURRENT LIMIT, I |
CIRCUITCURRENT |
, |
|
CL |
|
I |
|
400 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
600 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
390 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ENABLE |
(mV) |
500 |
|
|
|
|
|
|
OFF −> ON |
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||
380 |
|
|
|
|
|
|
|
|
|
ISC |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
EN,TH,OFF VOLTAGE |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
370 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
, |
|
400 |
|
|
|
|
ON −> OFF |
|
|
|
|
|
|
|
||||
360 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ICL |
|
|
|
|
|
|
|
300 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
350 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
THRESHOLD |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ICL |
: VOUT |
= 90% |
VOUT,NOM |
|
|
V |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
340 |
|
|
|
|
|
|
VIN = 1.5 V |
|
V |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||
|
|
|
|
|
|
|
VOUT,NOM = 1.2 V |
|
, |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||
330 |
|
|
|
|
|
|
|
EN,TH,ON |
|
200 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||||
|
|
|
|
|
|
CIN = COUT = 1 mF |
|
|
100 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
320 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
310 |
|
|
|
|
|
|
ISC: VOUT = 0 V (SHORT) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
300 |
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
−40 |
−20 0 |
20 40 60 80 100 120 |
140 |
|
−40 |
−20 0 |
20 40 |
|
60 80 100 120 140 |
||||||||||||||||||||||||
|
|
|
|
|
TJ, TEMPERATURE (°C) |
|
|
|
|
|
|
|
|
TJ, TEMPERATURE (°C) |
|||||||||||||||||||
|
|
|
Figure 13. Short−circuit Current vs. |
|
|
|
|
|
Figure 14. Enable thresholds voltage vs. |
||||||||||||||||||||||||
|
|
|
|
|
|
Temperature |
|
|
|
|
|
|
|
|
|
|
Temperature |
www.onsemi.com
5