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Philips Semiconductors Product specification

Triacs

 

 

 

 

 

BT136F series D

 

logic level

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GENERAL DESCRIPTION

QUICK REFERENCE DATA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Glass passivated, sensitive gate

 

SYMBOL

 

PARAMETER

 

 

 

MAX.

MAX.

UNIT

 

triacs in a full pack plastic envelope,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BT136F-

 

500D

 

600D

 

 

 

 

intended for use in general purpose

 

 

 

 

 

 

 

 

 

 

 

bidirectional switching and phase

 

VDRM

 

Repetitive peak off-state voltages

 

500

 

 

600

 

 

V

 

control applications. These devices

 

IT(RMS)

 

RMS on-state current

 

 

 

4

 

 

4

 

 

A

 

are intended to be interfaced directly

 

ITSM

 

Non-repetitive peak on-state current

 

25

 

 

25

 

 

A

 

to microcontrollers, logic integrated

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

circuits and other low power gate

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

trigger circuits.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PINNING - SOT186

PIN CONFIGURATION

SYMBOL

 

 

 

 

 

 

 

 

 

PIN DESCRIPTION

1main terminal 1

2main terminal 2

3gate

case isolated

case

T2

T1

1 2 3

G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

 

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

-500

 

-600

 

V

Repetitive peak off-state

 

-

5001

 

6001

V

DRM

voltages

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

full sine wave; Ths ≤ 92 ˚C

 

 

 

 

 

IT(RMS)

RMS on-state current

-

 

4

A

ITSM

Non-repetitive peak

full sine wave; Tj = 125 ˚C prior

 

 

 

 

 

 

on-state current

to surge; with reapplied VDRM(max)

-

 

25

A

 

 

t = 20 ms

 

 

 

t = 16.7 ms

-

 

27

A

I2t

I2t for fusing

t = 10 ms

-

 

3.1

A2s

dIT/dt

Repetitive rate of rise of

ITM = 6 A; IG = 0.2 A;

 

 

 

 

 

 

on-state current after

dIG/dt = 0.2 A/μs

 

 

 

 

A/μs

 

triggering

T2+ G+

-

 

50

 

 

T2+ G-

-

 

50

A/μs

 

 

T2- G-

-

 

50

A/μs

 

 

T2- G+

-

 

10

A/μs

IGM

Peak gate current

 

-

 

2

A

VGM

Peak gate voltage

 

-

 

5

V

PGM

Peak gate power

 

-

 

5

W

PG(AV)

Average gate power

over any 20 ms period

-

 

0.5

W

Tstg

Storage temperature

 

-40

 

150

˚C

Tj

Operating junction

 

-

 

125

˚C

 

temperature

 

 

 

 

 

 

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/μs.

February 1996

1

Rev 1.100

Philips Semiconductors Product specification

Triacs

 

 

 

 

 

 

BT136F series D

 

logic level

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISOLATION LIMITING VALUE & CHARACTERISTIC

 

 

 

 

 

 

Ths = 25 ˚C unless otherwise specified

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

 

CONDITIONS

 

MIN.

 

TYP.

MAX.

UNIT

 

Visol

Repetitive peak voltage from all

R.H. ≤ 65% ; clean and dustfree

 

-

 

 

1500

V

 

 

three terminals to external

 

 

 

 

 

 

 

 

 

 

heatsink

 

 

 

 

 

 

 

 

 

Cisol

Capacitance from T2 to external

f = 1 MHz

 

-

 

12

-

pF

 

 

heatsink

 

 

 

 

 

 

 

 

 

THERMAL RESISTANCES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

Rth j-hs

Thermal resistance

full or half cycle

-

 

-

5.5

K/W

 

 

junction to heatsink

with heatsink compound

 

 

 

 

without heatsink compound

-

 

-

7.2

K/W

 

Rth j-a

Thermal resistance

in free air

-

 

55

-

K/W

 

 

junction to ambient

 

 

 

 

 

 

 

 

 

STATIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Tj = 25 ˚C unless otherwise stated

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

IGT

Gate trigger current

VD = 12 V; IT = 0.1 A

-

 

2.0

5

mA

 

 

 

 

T2+ G+

 

 

 

 

 

T2+ G-

-

 

2.5

5

mA

 

 

 

 

T2- G-

-

 

2.5

5

mA

 

 

 

 

T2- G+

-

 

5.0

10

mA

 

IL

Latching current

VD = 12 V; IGT = 0.1 A

-

 

1.6

10

mA

 

 

 

 

T2+ G+

 

 

 

 

 

T2+ G-

-

 

4.5

15

mA

 

 

 

 

T2- G-

-

 

1.2

10

mA

 

 

 

 

T2- G+

-

 

2.2

15

mA

 

IH

Holding current

VD = 12 V; IGT = 0.1 A

-

 

1.2

10

mA

 

VT

On-state voltage

IT = 5 A

-

 

1.4

1.70

V

 

VGT

Gate trigger voltage

VD = 12 V; IT = 0.1 A

-

 

0.7

1.5

V

 

ID

 

VD = 400 V; IT = 0.1 A; Tj = 125 ˚C

0.25

 

0.4

-

V

 

Off-state leakage current

VD = VDRM(max); Tj = 125 ˚C

-

 

0.1

0.5

mA

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Tj = 25 ˚C unless otherwise stated

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

dVD/dt

Critical rate of rise of

VDM = 67% VDRM(max); Tj = 125 ˚C;

-

 

5

-

V/μs

 

 

off-state voltage

exponential waveform; RGK = 1 kΩ

 

 

 

 

μs

 

tgt

Gate controlled turn-on

ITM = 6 A; VD = VDRM(max); IG = 0.1 A;

-

 

2

-

 

 

time

dIG/dt = 5 A/μs

 

 

 

 

 

 

February 1996

2

Rev 1.100

Philips Semiconductors

Product specification

 

 

Triacs

BT136F series D

logic level

 

 

 

8

Ptot / W

 

 

BT136

Ths(max) / C

81

 

 

 

7

 

 

 

 

 

86.5

6

 

 

1

 

= 180

92

 

 

 

 

120

 

 

 

 

 

97.5

5

 

 

 

 

90

 

 

 

 

 

 

4

 

 

 

 

60

103

 

 

 

 

 

3

 

 

 

 

30

108.5

 

 

 

 

 

2

 

 

 

 

 

114

1

 

 

 

 

 

119.5

0

0

1

2

3

4

125

 

5

 

 

 

IT(RMS) / A

 

 

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.

1000

ITSM / A

 

BT136

 

 

 

 

 

IT

ITSM

 

 

 

 

T

time

 

 

 

 

Tj initial = 125 C max

100

 

 

 

 

 

 

 

dIT/dt limit

 

 

 

 

 

T2- G+ quadrant

 

 

 

10

 

100us

1ms

10ms

100ms

10us

 

 

 

T / s

 

 

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.

30

ITSM / A

 

BT136

 

25

 

 

IT

ITSM

 

 

 

 

 

 

 

T

time

20

 

 

Tj initial = 125 C max

15

 

 

 

 

10

 

 

 

 

5

 

 

 

 

0

1

10

100

1000

 

 

Number of cycles at 50Hz

 

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

IT(RMS) / A

 

BT136X

 

 

5

 

 

 

 

4

 

 

92 C

 

 

 

 

 

3

 

 

 

 

2

 

 

 

 

1

 

 

 

 

0

0

50

100

150

-50

 

 

Ths / C

 

 

Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.

12

IT(RMS) / A

BT136

 

 

10

 

 

 

 

8

 

 

 

 

6

 

 

 

 

4

 

 

 

 

2

 

 

 

 

0

 

0.1

1

10

0.01

 

 

surge duration / s

 

 

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 92˚C.

 

VGT(Tj)

 

BT136

 

1.6

VGT(25 C)

 

 

1.4

 

 

 

 

 

1.2

 

 

 

 

 

1

 

 

 

 

 

0.8

 

 

 

 

 

0.6

 

 

 

 

 

0.4

 

0

50

100

150

-50

 

 

 

Tj /

C

 

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996

3

Rev 1.100

Philips Semiconductors

Product specification

 

 

Triacs

BT136F series D

logic level

 

 

 

 

IGT(Tj)

 

 

 

 

3

IGT(25 C)

 

BT136D

T2+ G+

 

 

 

 

 

 

2.5

 

 

 

T2+ G-

 

 

 

 

T2- G-

 

 

 

 

 

 

2

 

 

 

T2- G+

 

 

 

 

 

 

1.5

 

 

 

 

 

1

 

 

 

 

 

0.5

 

 

 

 

 

0

 

0

50

100

150

-50

 

 

 

Tj / C

 

 

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj)

 

 

 

IL(25 C)

TRIAC

 

 

3

 

 

 

 

2.5

 

 

 

 

2

 

 

 

 

1.5

 

 

 

 

1

 

 

 

 

0.5

 

 

 

 

0

0

50

100

150

-50

 

 

Tj / C

 

 

Fig.8.

Normalised latching current IL(Tj)/ IL(25˚C),

 

versus junction temperature Tj.

 

IH(Tj)

 

 

 

3 IH(25C)

TRIAC

 

 

2.5

 

 

 

 

2

 

 

 

 

1.5

 

 

 

 

1

 

 

 

 

0.5

 

 

 

 

0

0

50

100

150

-50

 

 

Tj / C

 

 

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj.

12

 

IT / A

 

BT136

 

 

 

 

 

 

Tj = 125

C

 

 

 

 

 

 

 

10

 

Tj = 25

C

 

 

 

typ

 

max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vo = 1.27

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rs = 0.091

ohms

 

 

 

 

 

 

 

8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

0

0.5

 

1

1.5

2

2.5

3

 

 

 

 

 

 

VT / V

 

 

 

 

Fig.10. Typical and maximum on-state characteristic.

10

Zth j-hs (K/W)

BT136

 

 

 

 

with heatsink compound

 

 

 

 

 

without heatsink compound

 

 

 

 

 

 

unidirectional

 

 

 

 

1

 

 

 

bidirectional

 

 

 

 

 

 

 

 

0.1

 

 

 

P

t p

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

 

t

0.01

 

0.1ms

1ms

10ms

0.1s

1s

10s

10us

 

 

 

 

tp / s

 

 

 

Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp.

1000

dVD/dt (V/us)

 

 

 

100

 

 

 

 

10

 

 

 

 

1

0

50

100

150

 

 

 

Tj / C

 

Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.

February 1996

4

Rev 1.100

Philips Semiconductors Product specification

Triacs

BT136F series D

logic level

 

 

 

MECHANICAL DATA

 

Dimensions in mm

Net Mass: 2 g

10.2

 

 

 

 

 

 

 

 

 

 

 

 

max

 

 

 

 

5.7

 

 

 

 

 

 

 

 

 

 

 

 

max

 

 

 

 

 

 

0.9

 

3.2

 

 

 

 

 

 

 

 

0.5

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.4

4.0

seating plane

3.5 max

4.4

not tinned

 

13.5 min

1 2 3

0.4 M 0.9 0.7

2.54

5.08

4.4 max

2.9 max

7.9

7.5

17 max

0.55 max

1.3

top view

Fig.13. SOT186; The seating plane is electrically isolated from all terminals.

Notes

1.Accessories supplied on request: refer to mounting instructions for F-pack envelopes.

2.Epoxy meets UL94 V0 at 1/8".

February 1996

5

Rev 1.100

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